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GaN centre profiled by Materials Today

last modified Feb 12, 2019 04:35 PM
GaN centre profiled by Materials Today

An filling up the TEM with liquid nitrogen, as featured in Materials Today

Materials Today have published a profile of the GaN centre. They interviewed Rachel about her background and experience of leading the group, as well as an overview of our research. Including some detail about the exciting time resolved cathodoluminescence system about to be delivered here.

Read all about it here.

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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July 2019: Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates

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