Cubic GaN growth moves to 6-inch substrates

The next stage in our Innovate UK Energy Catalyst project on fabrication of cubic LEDs has arrived, and we plan to grow cubic GaN structures on 6-inch 3C-SiC substrates on (100) silicon, supplied by Anvil. The image shows Anvil's Daniel Nilsson with a standard 4-inch substrate. Menno is holding a new 6-inch large-area wafer.