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Cambridge Centre for Gallium Nitride


Our recent paper on polarized surface photoluminescence from cubic InGaN/GaN MQWs has been chosen as an editor’s pick by APL.

In this joined work between the David Binks group at the University of Manchester and us, we suggest that polarization effects from cubic InGaN/GaN MQWs might be related to recombination in quantum wire-like structures caused by stacking faults in the material. The editor’s choice to pick our paper highlights the excellence of a long year lasting story of research between both groups.

Well done.


We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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