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Advanced Architectures in Photonics 2018

last modified Sep 14, 2018 12:27 PM

On the 4th September, John Jarman delivered a talk entitled "Improving efficiency in InGaN LEDs using nanoporous GaN" at Advanced Architectures in Photonics (AAP), held in Selwyn College, Cambridge. The talk focused on our recent work with nanoporous GaN, showing how this material can be applied to light-emitting devices to enhance their external quantum efficiency. John is one of our graduate students in the Cambridge Centre for Gallium Nitride, and is currently in his third year of studying for his PhD.

You can find out more about the symposium at

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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July 2019: Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates

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