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Cambridge Centre for Gallium Nitride


On the 4th September, John Jarman delivered a talk entitled "Improving efficiency in InGaN LEDs using nanoporous GaN" at Advanced Architectures in Photonics (AAP), held in Selwyn College, Cambridge. The talk focused on our recent work with nanoporous GaN, showing how this material can be applied to light-emitting devices to enhance their external quantum efficiency. John is one of our graduate students in the Cambridge Centre for Gallium Nitride, and is currently in his third year of studying for his PhD.

You can find out more about the symposium at


We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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