skip to primary navigationskip to content
 

DiamondGraph

Fig 1. Channel temperature vs power density for a two finger GaN transistor. GaN on SiC is currently the highest performance technology available. GaN on diamond could deliver at least a 40% reduction in channel temperature for the same power density enabling either increased reliability or increased performance.
DiamondGraph
Full-size image: 67 KB | View imageView Download imageDownload

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

We are passionate about education and outreach! If you would like support for an education project then please .

May 2018: Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures

Read more