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Fig 1. Channel temperature vs power density for a two finger GaN transistor. GaN on SiC is currently the highest performance technology available. GaN on diamond could deliver at least a 40% reduction in channel temperature for the same power density enabling either increased reliability or increased performance.
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We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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September 2019: Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

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