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Fig 1. Channel temperature vs power density for a two finger GaN transistor. GaN on SiC is currently the highest performance technology available. GaN on diamond could deliver at least a 40% reduction in channel temperature for the same power density enabling either increased reliability or increased performance.
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December 2017: Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer

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