skip to primary navigationskip to content


A scanning electron microscope (SEM) image of a DBR made up of alternating layers of porous and non-porous GaN
Full-size image: 793 KB | View imageView Download imageDownload

We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

We are passionate about education and outreach! If you would like support for an education project then please .

July 2019: Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates

Read more