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SEM_PorousDBR

A scanning electron microscope (SEM) image of a DBR made up of alternating layers of porous and non-porous GaN
SEM_PorousDBR
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We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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October 2018: Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors

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