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Schematic of the set-up used to electrochemically etch a layered GaN structure to produce a porous DBR, as shown in the SEM image, right.
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We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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September 2019: Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

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