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Schematic of the set-up used to electrochemically etch a layered GaN structure to produce a porous DBR, as shown in the SEM image, right.
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We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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February 2018: Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

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