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John presenting his work on InGaN quantum dots at the UKNC conference. (Photo Credit: Martin Frentrup)
John poster
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We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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August 2019: Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates

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