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Publications from 2016

M. Pristovsek, M. Frentrup, Y. Han, and C. J. Humphreys (2016). Optimising GaN (1122) hetero-epitaxal templates grown on (1010) sapphire. Physica Status Solidi B, 253 (1), 61. doi10.1002/pssb.201552263

T. Grinys, R. Dargis, M. Frentrup, A. Kalpakovaite, K. Badokas, S. Stanionyte, A. Clark, and T. Malinauskas (2016). Facet analysis of truncated pyramid semi-polar GaN grown on Si(100) with rare-earth oxide interlayer. Journal of Applied Physics, 120, 105301. doi: 10.1063/1.4962312

Puchtler, T. J., Wang, T., Ren, C. X., Tang, F., Oliver, R. A., Taylor, R. A., & Zhu, T. (2016). Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires.. Nano Lett, 16(12), 7779-7785. doi:10.1021/acs.nanolett.6b03980

Zhu, T., Gachet, D., Tang, F., Fu, W. Y., Oehler, F., Kappers, M. J., . . . Oliver, R. A. (2016). Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence. Applied Physics Letters, 109(23). doi:10.1063/1.4971366

Massabuau, F. C. P., Piot, N., Frentrup, M., Wang, X., Avenas, Q., Kappers, M., . . . Oliver, R. (n.d.). Research data supporting "X-ray reflectivity method for the characterisation of InGaN/GaN quantum well interface". doi: 10.17863/CAM.6606

Hibberd, M. T., Frey, V., Spencer, B. F., Mitchell, P. W., Dawson, P., Kappers, M. J., . . . Graham, D. M. (2016). Dielectric response of wurtzite gallium nitride in the terahertz frequency range. Solid State Communications, 247, 68-71. doi:10.1016/j.ssc.2016.08.017

Schulz, S., Tanner, D. S. P., O'Reilly, E. P., Caro, M. A., Tang, F., Griffiths, J. T., . . . Dawson, P. (2016). Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m -plane InGaN/GaN quantum wells. Applied Physics Letters, 109(22). doi: 10.1063/1.4968591

Zhu, T., Gachet, D., Tang, F., Fu, W. Y., Oehler, F., Kappers, M. J., . . . Oliver, R. A. (n.d.). Research data supporting "Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence". doi: 10.17863/CAM.6452

Kundys, D., Sutherland, D., Davies, M. J., Oehler, F., Griffiths, J., Dawson, P., . . . Oliver, R. A. (2016). A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates. Science and Technology of Advanced Materials, 17(1), 736-743. doi:10.1080/14686996.2016.1244474

Griffiths, J. T., Zhang, S., Lhuillier, J., Zhu, D., Fu, W. Y., Howkins, A., . . . Oliver, R. A. (2016). Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold. Journal of Applied Physics, 120(16). doi:10.1063/1.4965989

Badcock, T. J., Ali, M., Zhu, T., Pristovsek, M., Oliver, R. A., & Shields, A. J. (2016). Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures. Applied Physics Letters, 109(15). doi:10.1063/1.4964842

Pristovsek, M., Han, Y., Zhu, T., Oehler, F., Tang, F., Oliver, R. A., . . . Weyers, M. (2016). Structural and optical properties of (1122) InGaN quantum wells compared to (0001) and (1120). Semiconductor Science and Technology, 31(8). doi:10.1088/0268-1242/31/8/085007

Davies, M. J., Dawson, P., Hammersley, S., Zhu, T., Kappers, M. J., Humphreys, C. J., & Oliver, R. A. (2016). Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells. Applied Physics Letters, 108(25). doi:10.1063/1.4954236

Dawson, P., Schulz, S., Oliver, R. A., Kappers, M. J., & Humphreys, C. J. (2016). The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. Journal of Applied Physics, 119(18). doi:10.1063/1.4948237

Madusanka, N., Shivareddy, S. G., Hiralal, P., Eddleston, M. D., Choi, Y., Oliver, R. A., & Amaratunga, G. A. J. (2016). Nanocomposites of TiO/cyanoethylated cellulose with ultra high dielectric constants.. Nanotechnology, 27(19), 195402. doi:10.1088/0957-4484/27/19/195402

Griffiths, J. T., Oehler, F., Tang, F., Zhang, S., Fu, W. Y., Zhu, T., . . . Oliver, R. A. (2016). The microstructure of non-polar a-plane (11 2  0) InGaN quantum wells. Journal of Applied Physics, 119(17). doi:10.1063/1.4948299

Hammersley, S., Dawson, P., Kappers, M. J., Massabuau, F. C. P., Frentrup, M., Oliver, R. A., & Humphreys, C. J. (2016). Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs. Physica Status Solidi (C) Current Topics in Solid State Physics, 13(5-6), 262-265. doi:10.1002/pssc.201510188

Davies, M. J., Hammersley, S., Massabuau, F. C. P., Dawson, P., Oliver, R. A., Kappers, M. J., & Humphreys, C. J. (2016). A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers. Journal of Applied Physics, 119(5). doi:10.1063/1.4941321

Zhu, T., Ding, T., Tang, F., Han, Y., Ali, M., Badcock, T., . . . Oliver, R. A. (2016). Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers.. Cryst Growth Des, 16(2), 1010-1016. doi:10.1021/acs.cgd.5b01560

Zhu, T., & Oliver, R. A. (2016). Nitride quantum light sources. EPL, 113(3). doi:10.1209/0295-5075/113/38001

Christian, G. M., Hammersley, S., Davies, M. J., Dawson, P., Kappers, M. J., Massabuau, F. C. P., . . . Humphreys, C. J. (2016). Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells. Physica Status Solidi (C) Current Topics in Solid State Physics, 13(5-6), 248-251. doi:10.1002/pssc.201510180

Novikov, S. V., Staddon, C. R., Sahonta, S. L., Oliver, R. A., Humphreys, C. J., & Foxon, C. T. (2016). Molecular beam epitaxy of free-standing bulk wurtzite Al<inf>x</inf>Ga<inf>1-x</inf>N layers using a highly efficient RF plasma source. Physica Status Solidi (C) Current Topics in Solid State Physics, 13(5-6), 217-220. doi:10.1002/pssc.201510166

Dunn, A., Spencer, B. F., Hardman, S. J. O., Graham, D. M., Hammersley, S., Davies, M. J., . . . Humphreys, C. J. (2016). Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopy. Physica Status Solidi (C) Current Topics in Solid State Physics, 13(5-6), 252-255. doi:10.1002/pssc.201510193

Novikov, S. V., Staddon, C. R., Sahonta, S. L., Oliver, R. A., Humphreys, C. J., & Foxon, C. T. (2016). Growth of free-standing bulk wurtzite Al<inf>x</inf>Ga<inf>1-x</inf>N layers by molecular beam epitaxy using a highly efficient RF plasma source. Journal of Crystal Growth. doi:10.1016/j.jcrysgro.2016.07.038

Hammersley, S., Kappers, M. J., Massabuau, F. C. P., Sahonta, S. L., Dawson, P., Oliver, R. A., & Humphreys, C. J. (2016). Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures. Physica Status Solidi (C) Current Topics in Solid State Physics, 13(5-6), 209-213. doi:10.1002/pssc.201510187

Oliver, R. A. (2016). Critical assessment 23: Gallium nitride-based visible light-emitting diodes. Materials Science and Technology (United Kingdom), 32(8), 737-745. doi:10.1080/02670836.2015.1116225

Ren, C. X., Rouet-Leduc, B., Griffiths, J. T., Bohacek, E., Wallace, M. J., Edwards, P. R., . . . Oliver, R. A. (2016). Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs. Superlattices and Microstructures, 99, 118-124. doi: 10.1016/j.spmi.2016.03.036

J Bruckbauer, C Brasser, NJ Findlay, PR Edwards, DJ Wallis, PJ Skabara and RW Martin, "Colour tuning in white hybrid inorganic/organic light-emitting diodes", Journal of Physics D: Applied Physics 49 (40), 405103, (2016)

E Taylor-Shaw, E Angioni, N J. Findlay, B Breig, A R. Inigo, J Bruckbauer, D J. Wallis, P J. Skabara, and R W. Martin, " Cool to Warm White Light Emission from Inorganic/ Organic Hybrid Light Emitting Diodes", Journal of Materials Chemistry C 4(48), 11499-11507, (2016)

Qian, H; Lee, K; Hosseini, S; Novikov, S; Guiney, I; Zhang, S; Zaidi, S; Jiang, S; Wallis, D; Foxon, C; Humphreys, C; Houston, P, "Characterization of p-GaN1-xAsx/n-GaN PN Junction Diodes ", Semiconductor Science and Technology, 31 (6) 65020-65025, (2016) 

WM. Waller, MJ. Uren, KB Lee, PA. Houston, DJ. Wallis, I Guiney, CJ. Humphreys, S Pandey, J Sonsky, and M Kuball, "Subthreshold mobility in AlGaN/GaN HEMTs", IEEE Transactions on Electron Devices 63(5), 1861-1865, (2016)

JW Roberts, P Chalker, KB Lee, PA Houston,SJ Cho, IG Thayne, I Guiney, DJ Wallis and CJ Humphreys, "Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics", Applied Physics Letters 108(7):072901 (2016)

Y Han, D Zhu, T Zhu, CJ Humphreys, DJ Wallis," Origins of hillock defects on GaN templates grown on Si(111)", Journal of Crystal Growth 434, 123-127 (2016)

A Eblabla, X Li, DJ Wallis, I Guiney, K Elgaid, " GaN on Low-Resistivity Silicon THz High-Q Passive Device Technology", IEEE Transactions on Terahertz Science and Technology, 7(1), 93-97, (2016), DOI: 10.1109/TTHZ.2016.2618751