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Publications from 2015

A.J. Trindade, B. Guilhabert, E. Y. Xie, R. Ferreira, J.J.D. McKendry, D. Zhu, N. Laurand, E. Gu, D.J. Wallis, I.M. Watson, C.J. Humphreys, and M.D. Dawson, " Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing", Optics Express 23(7), 9329-9338 (2015)

Sutherland, D., Zhu, T., Griffiths, J. T., Tang, F., Dawson, P., Kundys, D., Oehler, F., Kappers, M. J., Humphreys, C. J. and Oliver, R. A. (2015), Optical studies of non-polar m-plane (math formula) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN. Phys. Status Solidi B, 252: 965–970. doi: 10.1002/pssb.201451563

Griffiths, J. T.Zhang, S.Rouet-Leduc, B.Fu, W. Y.Bao, A.Zhu, D.Wallis, D., et al. (2015). Nanocathodoluminescence reveals mitigation of the Stark shift in InGaN quantum wells by Si doping. Nano Letters15 (11), 7639-7643. doi: 10.1021/acs.nanolett.5b03531

Springbett, H.Griffiths, J.Ren, C.O’Hanlon, T.Barnard, J.Sahonta, S.Zhu, T., & et al. (2015). Structure and composition of nonpolar (11-20) InGaN nano-rings grown by Modified Droplet Epitaxy. Physica Status Solidi (b)253, No. 5, 840844. doi: 10.1002/pssb.201552633

Zhang, S.Cui, Y.Griffiths, J. T.Fu, W. Y.Freysoldt, C.Neugebauer, J.Humphreys, C. J., & et al. (2015). Difference in linear polarization of biaxially-strained InₓGa₁₋ₓN alloys on non-polar a-plane and m-plane GaN. Physical Review B, 92 (245202). doi: 10.1103/PhysRevB.92.245202

Schulz, S.Tanner, D. P.O'Reilly, E. P.Caro, M. A.Martin, T. L.Bagot, P. A. J.Moody, M. P., et al. (2015). Structural, electronic and optical properties of m-plane (In,Ga)N/GaN quantum wells: Insights from experiment and atomistic theory. Physical Review B92 (235419). doi: 10.1103/PhysRevB.92.235419

Matt Horton, Sneha Rhode, Lata Sahonta, Menno Kappers, Sarah Haigh, Tim Pennycook, Colin Humphreys, Rajiv Dusane and Shelly Moram (2015). Segregation of In to Dislocations in InGaN. Nano Letters, 15, 2, 923-930. doi: 10.1021/nl5036513

Markus Pristovsek, Yisong Han, Tongtong Zhu, Martin Frentrup, Menno J. Kappers, Colin J. Humphreys, Grzegorz Kozlowski, Pleun Maaskant, Brian Corbett (2015). Low defect large area semi-polar(11¯22) GaN grown on patterned(113) silicon. Phys. Status Solidi B, 1–5. doi: 10.1002/pssb.201451591

Zhu, T., Griffiths, J. T., Fu, W. Y., Howkins, A., Boyd, I. W., Kappers, M. J., & Oliver, R. A. (2015). Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy. Superlattices and Microstructures, 88, 480-488. doi:10.1016/j.spmi.2015.10.001

Zhang, S., Cui, Y., Griffiths, J. T., Fu, W. Y., Freysoldt, C., Neugebauer, J., . . . Oliver, R. A. (2015). Difference in linear polarization of biaxially strained inx G a1-x N alloys on nonpolar a -plane and m -plane GaN. Physical Review B - Condensed Matter and Materials Physics, 92(24). doi:10.1103/PhysRevB.92.245202

Griffiths, J. T., Zhang, S., Rouet-Leduc, B., Fu, W. Y., Bao, A., Zhu, D., . . . Oliver, R. A. (2015). Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping..Nano Lett, 15(11), 7639-7643. doi:10.1021/acs.nanolett.5b03531

Hammersley, S., Kappers, M. J., Massabuau, F. C. P., Sahonta, S. L., Dawson, P., Oliver, R. A., & Humphreys, C. J. (2015). Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions. Applied Physics Letters, 107(13). doi:10.1063/1.4932200

Tang, F., Barnard, J. S., Zhu, T., Oehler, F., Kappers, M. J., & Oliver, R. A. (2015). Microstructural dependency of optical properties of m -plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates. Applied Physics Letters, 107(8). doi:10.1063/1.4928723

Sugime, H., Esconjauregui, S., D'Arsié, L., Yang, J., Robertson, A. W., Oliver, R. A., . . . Robertson, J. (2015). Low-Temperature Growth of Carbon Nanotube Forests Consisting of Tubes with Narrow Inner Spacing Using Co/Al/Mo Catalyst on Conductive Supports..ACS Appl Mater Interfaces, 7(30), 16819-16827. doi:10.1021/acsami.5b04846

Niu, N., Woolf, A., Wang, D., Zhu, T., Quan, Q., Oliver, R. A., & Hu, E. L. (2015). Ultra-low threshold gallium nitride photonic crystal nanobeam laser. Applied Physics Letters, 106(23). doi:10.1063/1.4922211

Sutherland, D., Zhu, T., Griffiths, J. T., Tang, F., Dawson, P., Kundys, D., . . . Oliver, R. A. (2015). Optical studies of non-polar m-plane (11-00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN. Physica Status Solidi (B) Basic Research, 252(5), 965-970. doi:10.1002/pssb.201451563

Massabuau, F. C. P., Davies, M. J., Blenkhorn, W. E., Hammersley, S., Kappers, M. J., Humphreys, C. J., . . . Oliver, R. A. (2015). Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures. Physica Status Solidi (B) Basic Research, 252(5), 928-935. doi:10.1002/pssb.201451543

Hammersley, S., Davies, M. J., Dawson, P., Oliver, R. A., Kappers, M. J., & Humphreys, C. J. (2015). Carrier distributions in InGaN/GaN light-emitting diodes. Physica Status Solidi (B) Basic Research, 252(5), 890-894. doi:10.1002/pssb.201451534

Davies, M. J., Dawson, P., Massabuau, F. C. P., Fol, A. L., Oliver, R. A., Kappers, M. J., & Humphreys, C. J. (2015). A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures. Physica Status Solidi (B) Basic Research, 252(5), 866-872. doi:10.1002/pssb.201451535

Tang, F., Moody, M. P., Martin, T. L., Bagot, P. A. J., Kappers, M. J., & Oliver, R. A. (2015). Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials..Microsc Microanal, 21(3), 544-556. doi:10.1017/S1431927615000422

Reid, B. P. L., Kocher, C., Zhu, T., Oehler, F., Chan, C. C. S., Oliver, R. A., & Taylor, R. A. (2015). Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization. Applied Physics Letters, 106(17). doi:10.1063/1.4919656

Kappers, M. J., Zhu, T., Sahonta, S. L., Humphreys, C. J., & Oliver, R. A. (2015). SCM and SIMS investigations of unintentional doping in III-nitrides. Physica Status Solidi (C) Current Topics in Solid State Physics, 12(4-5), 403-407. doi:10.1002/pssc.201400206

Wallace, M. J., Edwards, P. R., Kappers, M. J., Hopkins, M. A., Oehler, F., Sivaraya, S., . . . Martin, R. W. (2015). Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Journal of Applied Physics, 117(11). doi:10.1063/1.4915628

Tang, F., Zhu, T., Oehler, F., Fu, W. Y., Griffiths, J. T., Massabuau, F. C. P., . . . Oliver, R. A. (2015). Indium clustering in a -plane InGaN quantum wells as evidenced by atom probe tomography. Applied Physics Letters, 106(7). doi:10.1063/1.4909514

Puchtler, T. J., Woolf, A., Zhu, T., Gachet, D., Hu, E. L., & Oliver, R. A. (2015). Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities..ACS Photonics, 2(1), 137-143. doi:10.1021/ph500426g

Kappers, M. J., Zhu, T., Sahonta, S. -L., Humphreys, C. J., & Oliver, R. A. (2015). SCM and SIMS investigations of unintentional doping in III-nitrides. Physica Status Solidi (C) Current Topics in Solid State Physics. doi:10.1002/pssc.201400206

Tang, F., Moody, M. P., Martin, T. L., Bagot, P. A. J., Kappers, M. J., & Oliver, R. A. (2015). Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials. Microscopy and Microanalysis, 21(3), 544-556. doi:10.1017/S1431927615000422

Sutherland, D., Zhu, T., Griffiths, J. T., Tang, F., Dawson, P., Kundys, D., . . . Oliver, R. A. (2015). Optical studies of non-polar m-plane (11-00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN. Physica Status Solidi (B) Basic Research. doi:10.1002/pssb.201451563

Massabuau, F. C. -P., Davies, M. J., Blenkhorn, W. E., Hammersley, S., Kappers, M. J., Humphreys, C. J., . . . Oliver, R. A. (2015). Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures. Physica Status Solidi (B) Basic Research. doi:10.1002/pssb.201451543

Power electronics:

A. Eblabla, X. Li, I. Thayne, D. J. Wallis, I. Guiney, K. Elgaid (2015). High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for x-Band Applications. Physica Status Solidi B, Volume 252, 866-872. doi: 10.1109/LED.2015.2460120

A Eblabla, K Elgaid, DJ Wallis, I Guiney, "Novel Shielded Coplanar Waveguides on GaN-on-Low Resistivity Si Substrates for MMIC Applications", IEEE Microwave and Wireless Components Letters, 25(7) 427-429 (2015)

W M Waller, S Karboyan, MJ Uren, KB Lee, PA Houston, DJ Wallis, I Guiney, CJ Humphreys, M Kuball, " Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs", Electron Devices, IEEE Transactions on 62 (8), 2464-2469 (2015)

Z.H. Zaidi, K.B. Lee, I. Guiney, H. Qian, S. Jiang, D.J. Wallis, C.J. Humphreys and P.A. Houston, " Enhancement Mode operation in AlInN/GaN MISHEMTs on Si Substrates using Fluorine Implant", Semiconductor Science and Technology 30 (10), 105007 (2015)

K B. Lee, I Guiney, S Jiang, Z H. Zaidi, H Qian, D J. Wallis, M J. Uren, C J. Humphreys and P A. Houston, " Enhancement-mode Metal-insulator-semiconductor GaN/ AlInN/GaN Heterostructure Field Effect Transistors on Si with a Threshold Voltage of +3.0 V and Blocking Voltage Above 1000 V", Applied Physics Express 8(3), 036502 (2015)