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Publications from 2014

Griffiths JT, Zhu T, Oehler F, Emery RM, Fu WY, Reid BPL, Taylor RA, Kappers MJ, Humphreys CJ and Oliver RA, “Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method”, APL Mat. 2 (2014) 126101.

 

Massabuau FC-P, Davies MJ, Oehler F, Pamenter SK, Thrush EJ, Kappers MJ, Kovács A, Williams T, Hopkins MA, Humphreys CJ, Dawson P, Dunin-Borkowski RE, Etheridge J, Allsopp DWE, and Oliver RA, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem”, Appl. Phys. Lett. 105 (2014) 112110.

 

Rhode SL, Fu WY, Moram MA, Massabuau FC-P, Kappers MJ, McAleese C, Oehler F, Humphreys CJ, Dusane RO, and Sahonta SL, “Structure and strain relaxation effects of defects in In x Ga1x N epilayers”, J. Appl. Phys. 116 (2014) 103513.

 

Davies MJ, Dawson P, Massabuau FC-P, Oliver RA, Kappers MJ, and Humphreys CJ, “The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures”, Appl. Phys. Lett 105 (2014) 092106.

 

Badcock TJ, Dawson P, Davies MJ, Oliver RA, Kappers MJ and Humphreys CJ, “Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures”, phys. stat. sol. (C), 11 issue 3-4 (2014) 738-741.

 

Badcock TJ, Dawson P, Davies MJ, Kappers MJ, Massabuau FC-P, Oehler F, Oliver RA and Humphreys CJ, “Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells”, J. Appl. Phys. 115 (2014) 113505.

 

Bruckbauer J, Edwards PR, Sahonta S-L, Massabuau FC-P, Kappers MJ, Humphreys CJ, Oliver RA and Martin RW, “Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures”, J. Phys. D – Applied Physics 47 (2014) 135107.

 

Davies MJ, Massabuau FC-P, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ, “Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures”, phys. stat. sol. (C), 11 issue 3-4 (2014) 710-713.

 

Davies MJ, Badcock TJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ, “High excitation density recombination dynamics in InGaN/GaN quantum well structures”, phys. stat. sol. (C), 11 issue 3-4 (2014) 694-697.

 

Davies MJ, Dawson P, Massabuau FC-P, Oehler F, Oliver RA, Kappers MJ, Badcock TJ and Humphreys CJ, “The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells”, phys. stat. sol. (C), 11 issue 3-4 (2014) 750-753.

 

Emery RM, Zhu T, Oehler F, Reid BPL, Taylor RA, Kappers MJ and Oliver RA, “Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapour phase epitaxy”, phys. stat. sol. (C), 11 issue 3-4 (2014) 698-701.

 

Tian PF, McKendry JJD, Gong Z, Zang SL, Watson S, Zhu D, Watson IM, Gu ED, Kelly AE, Humphreys CJ and Daswon MD, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates”, J. Appl. Phys., 115 (2014) 033112.

 

Massabuau FC-P, Le Fol A, Pamenter SK, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA, “The impact of growth parameters on trench defects in InGaN/GaN quantum wells”, phys. stat. sol. (A), 11 issue 4 (2014) 740-743.

 

Massabuau FC-P, Tartan CC, Traynier R, Blenkhorn WE, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA, “The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method”, J. Cryst. Growth 386 (2014) 88-93.

 

Naresh-Kumar G, Bruckbauer J, Edwards PR, Kraeusel S, Hourahine B, Martin RW, Kappers MJ, Moram MA, Lovelock S, Oliver RA, Humphreys CJ and Trager-Cowan C, “Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN”, Microscopy and Microanalysis, 20 issue 01 (2014) pp 55-60.

 

Reid BPL, Zhu T, Chan CCS, Kocher C, Oehler F, Emery RM, Kappers MJ, Oliver RA and Taylor RA, “High temperature stability in non-polar (11-20) InGaN quantum dots: Exciton and biexciton dynamics”, phys. stat. sol. (C), 11 issue 3-4 (2014) 702-705.

 

Sutherland D, Oehler F, Zhu T, Griffiths JT, Badcock TJ, Dawson P, Emery RM, Kappers MJ, Humphreys CJ and Oliver RA, “An investigation into defect reduction techniques for growth of non-polar GaN on sapphire”, phys. stat. sol. (C), 11 issue 3-4 (2014) 541-544.