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Publications from 2013

Aharonovich I, Woolf A, Russell KJH, Zhu T, Niu N, Kappers MJ, Oliver RA and Hu EL, “Low threshold, room-temperature microdisk lasers in the blue spectral range”, Appl. Phys. Lett. 103 (2013) 021112.

 

Badcock TJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ, “Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells”, Jpn. J. Appl. Phys. 52 (2013) 08JL12.

 

Badcock TJ, Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ, “Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures”, Jpn. J. Appl. Phys. 52 (2013) 08JK10.

 

Boulbar ED, Gîrgel I, Lewins CJ, Edwards PR, Martin RW, Šatka A, Allsopp DWE and Shields PA, “Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by MOVPE on etched GaN nanorod arrays,” J. Appl. Phys. 114 (2013) 094302.

 

Bruckbauer J, Edwards PR, Bai J, Wang T and Martin RW, “Probing light emission from quantum wells within a single nanorod”, Nanotechnology 6 (2013) 365704.

 

Chan CCS, Reid BPL, Taylor RA, Zhuang YD, Shields PA, Allsopp DWE and Jia W, “Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale,” Appl. Phys. Lett. 102 (2013) 111906.

 

Davies MJ, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ, “High Excitation Carrier Density Recombination Dynamics of InGaN/GaN Quantum Well Structures: Possible Relevance to Efficiency Droop”, Appl. Phys. Lett. 102 (2013) 022106.

 

Findlay NJ, Orofino-Pena C, Bruckbauer J, Elmasly SET, Arumugam S, Inigo AR, Kanibolotsky AL, Martin RW and Skabara PJ, “Linear oligofluorene-BODIPY structures for fluorescence applications”, J. Mat. Chem. C 1 (2013) 2249-2256.

 

Hirsch PB, Lozano JG, Rhode S, Horton MK, Moram MA, Zhang S, Kappers MJ, Humphreys CJ, Yasuhara A, Okunishi E and Nellist PD, “The dissociation of the [a plus c] dislocation in GaN”, Phil. Mag. 93 (2013) 28-30.

 

Huang C-N, Shields PA, Allsopp DWE and Trampert A, “Coalescence-induced planar defects in GaN layers grown on ordered arrays of nanorods by metal–organic vapour phase epitaxy,” Philos. Mag.  93 (2013) 3154-3166.

 

Hugues M, Shields PA, Sacconi F, Mexis M, Auf der Maur M, Cooke M,  Dineen M, Di Carlo A, Allsopp DWE and Zúñiga-Pérez J, “Strain evolution in GaN Nanowires: from free-surface objects to coalesced templates,” J. Appl. Phys. 114 (2013) 084307.

 

Humphreys CJ, “The significance of Bragg’s law in electron diffraction and microscopy, and Bragg’s second law”, Acta Cryst. A 69 (2013) 45-50.

 

Jiang Q, Allsopp DWE, Bowen CR and Wang WN, “The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si (111) substrates,” Semicond. Sci. and Technol. 28 (2013) 094010.

 

Jiang Q, Lewins CJ,  Allsopp DWE, Bowen CR, Wang WN, Satka A, Priesol J, and Uherek F, “Enhanced Photoluminescence from InGaN/GaN Quantum Wells on A GaN/Si(111) Template with Extended Three-Dimensional GaN Growth on Low-Temperature AlN Interlayer,” Jpn. J. Appl. Phys. 52 (2013) 061002.

 

Jouvet N, Kappers MJ, Humphreys CJ and Oliver RA, “The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption”, J. Appl. Phys. 113 (2013) 063503.

 

Le Boulbar ED, Girgel I, Lewins CJ, Edwards PR, Martin RW, Satka A, Allsopp DWE and Shields PA, “Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays”, J. Appl. Phys. 114 (2013) 094302.

 

Lewins CJ, Allsopp DWE, Shields PA, Gao X, Humphreys CJ and Wang WN, “Light Extracting Properties of Buried Photonic Quasi-crystal Slabs in InGaN/GaN LEDs,” J. Display Technol. vol. 9 (2013) 333-338.

 

Maaskant PP, Shams H, Akhter M, Henry W, Kappers MJ, Zhu D, Humphreys CJ and Corbett B, “High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance”, Appl. Phys. Exp. 6 (2013) 022102.

 

Massabuau FC-P; Trinh-Xuan L, Lodie D, Thrush EJ, Zhu D, Oehler F, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA, “Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells”, J. Appl. Phys. 113 (2013) 073505.

 

Massabuau FC-P; Trinh-Xuan L, Lodie D, Sahonta S-L, Rhode S, Thrush EJ, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA, “Towards a better understanding of trench defects in InGaN/GaN quantum wells”, J. Appl. Phys. Conference Series 471 (2013) 012042.

 

Massabuau FC-P, Tartan CC, Traynier R, Blenkhorn WE, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA, “The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method”,  J. Cryst. Growth 368 (2014) 88-93.

 

Meneghini M, Trivellin N, Berti M, Cesca T, Gasparotto A, Vinattieri A, Bogani F, Zhu D, Humphreys CJ, Meneghesso G and Zanoni E, “Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs”,  GaN Materials and Devices 8625 (2013) 86251P.

 

Meneghini M, Vaccari S, Garbujo A, Travellin N, Zhu D, Humphreys CJ, Calciati M, Goano M, Bertazzi F, Ghione G, Bellotti E, Meneghesso G and Zanoni E, “Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-based Light-Emitting Diodes with Colour Coded Quantum Wells”, Jpn J. Appl. Phys. 52 (2013) 08JG09.

 

Oehler F, Vickers ME, Kappers MJ and Oliver RA, “Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction”, J. Appl. Phys. 114 (2013) 053520.

 

Oehler F, Vickers M, Kappers MJ, Humphreys CJ and Oliver RA, “Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds”, Jpn. J. Appl. Phys. 52 (2013) 08JB29.

 

Oehler F, Vickers M, Kappers MJ, Humphreys CJ and Oliver RA, “Strain state characterisation of GaN based compounds by XRD and precise alloy content determination”, Jpn. J. Appl. Phys. 52 (2013) 08JB29.

 

Oehler F, Zhu T, Rhode S, Kappers MJ, Humphreys CJ and Oliver RA, “Surface morphology of homoepitaxial c-plane GaN: hillocks and ridges”, J. Cryst. Growth 383 (2013) 12-18.

 

Oliver RA, Massabuau FC-P, Kappers MJ, Phillips WA, Thrush EJ, Tartan CC, Blenkhorn WE, Badcock TJ, Dawson P, Hopkins MA, Allsopp DWE and Humphreys CJ, “The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes”,  Appl. Phys. Lett.  103 (2013) 141114

 

Priesol J, Satka A, Uherek F, Donoval D, Shields PA and D.W.E. Allsopp DWE, “Quantitative analysis of cathodoluminescence phenomena in InGaN/GaN QW by Monte Carlo method,” Appl. Surface Sci. 269 (2013) 155-160  (2013).

 

Rhode SK, Horton MK, Kappers MJ, Zhang S, Humphreys CJ, Dusane RO, Sahonta S-L and Moram MA, “Mg Doping Affects Dislocation Core Structures in GaN”, Phys. Rev. Lett. 111 (2013) 025502.

 

Sahonta S-L, Kappers MJ, Zhu D, Putchler TJ, Zhu T and Bennett SE, “Properties of trench deffects in InGaN/GaN quantum well structures”, phys. stat. sol. A 210 (2013) 195-198.

 

Taylor E, Fang F, Oehler F, Edwards PR, Kappers MJ, Lorenz K, Alves E, Humphreys CJ and Martin RW, “Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates”, Semiconductor Science and Technology 28 (2013) 065011.

 

Trindade AJ, Guilhabert B, Massoubre D, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ and Dawson MD, “Nanosacle-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates”, Appl. Phys. Lett. 25 (2013) 253302.

 

Wallis DJ, Zhu D, Oehler F, Westwater SP, Pujol A and Humphreys CJ, “Measuring the composition of AlGaN layers in GaN based structures on 150 mm Si substrates using (2 0 5) reciprocal space maps”, Semiconductor Science and Technology 28 (2013) 094006.

 

Zhang S, Fu WY, Holec D, Humphreys CJ and Moram MA, “Elastic constants and critical thickness of ScGaN ans ScAlN”, J. Appl. Phys. 114 (2013) 243516.

 

Zhang SY, Holec D, Fu WY, Humphreys CJ and Moram MA, “Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides”, J. Appl. Phys. 114 (2013) 133510.

 

Zhang SY, Zhang YC, Cui Y, Freysoldt C, Neugebauer J, Lieten RR, Barnard JS and Humphreys CJ, “Interfacial Structure and Chemistry of GaN on Ge”, Phys. Rev. Lett. 111 (3013) 256101.

 

Zhang Y, Kappers MJ, Zhu D, Oehler F, Gao F and Humphreys CJ, “The effect of dislocations on the efficiency of InGaN/GaN solar cells”, Solar Energy Materials and Solar Cells 117 (2013) 279-284.

 

Zhu D, Wallis DJ and Humphreys CJ, “Prospects of III-nitride optoelectronics grown on Si”, Rep. Prog. Phys. 76 (2013) 106501.

 

Zhu T, Sutherland D, Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ and Oliver RA, “Defect reduction in semi-polar (11-22) gallium nitride grown using epitaxial lateral overgrowth”, Jpn. J. Appl. Phys. 52 (2013) 08JB01.

 

Zhu T, Oehler F, Reid BPL, Emery RM, Taylor RA, Kappers MJ and Oliver RA, “Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy”, Appl. Phys. Lett. 103 (2013) 251905.

 

Zhuang YD, Lewins CJ, Lis S, Shields PA and D.W.E. Allsopp DWE, “Fabrication and Characterization of Light Emitting Diodes Comprising Highly Ordered Arrays of Emissive InGaN/GaN Nanorods”, IEEE Photon. Technol. Lett. 25 (2013) 1047-1049.

 

Zhuang YD, Lis S, Bruckbauer J, O’Kane SEJ, Shields PA, Edwards PR, Sarma J, Martin RW and Allsopp DWE, “Optical properties of GaN nanorods containing a single or multiple InGaN quantum wells,” Jpn. J. Appl. Phys. 52 (2013) 08JE11.