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UKNC Winter Conference

last modified Jan 04, 2017 04:13 PM
UKNC Winter Conference - The Cambridge centre for GaN will be presenting several talks and posters.

The UK Nitrides Consortium's winter Conference will be held in Oxford on the 5th and 6th January and the Cambridge GaN centre will be there in full force! We have several talks across both days and a number of posters. Here's a programme of what we and our collaborators will be presenting and when. For more information on the conference itself see the UKNC website.

Thursday 5th January

12.15-12.30

Microstructural analysis of E-mode InAlN/GaN high electron mobility transistor structures grown on silicon wafer by metal organic vapour phase epitaxy

 F. Tang1, I. Guiney1, J. Barnard1, D. J. Wallis1, C. J. Humphreys1, R. A. Oliver1, K. B. Lee2, Z. Zaidi2, P. A. Houston2, T. Martin3, P. Bagot3 and M. Moody3

1 Dept. of Materials Science and Metallurgy, University of Cambridge

2 Dept. of Electronic and Electrical Engineering, University of Sheffield

3 Dept. of Materials, University of Oxford

 

13.45-14.00:

Design of Normally-off V-groove Vertical High Electron Mobility Transistors using (11-22) Semi-polar GaN

H. Qian1, K. B. Lee1, S. Hosseini Vajargah2, S. V. Novikov3, I. Guiney2, Z. H. Zaidi1, S. Jiang1, D. J. Wallis2C. T. Foxon3, C. J. Humphreys2 and P. A. Houston1

1 Dept. of Electronic and Electrical Engineering, University of Sheffield

2 Dept. of Material Science and Metallurgy, University of Cambridge

3 School of Physics and Astronomy, University of Nottingham

 

14.00-14.15

High Voltage All GaN Integrated Cascode Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

S. Jiang1, K. B. Lee1, P. F. Miaja2, I. Guiney3, Z. H. Zaidi1, H. Qian1, D. J. Wallis3, A. J. Forsyth2C. J. Humphreys3 and P. A. Houston1

1 Dept. of Electronic and Electrical Engineering, University of Sheffield

2 School of Electrical and Electronic Engineering, University of Manchester

3 Dept. of Materials Science and Metallurgy, University of Cambridge

 

15.15-15.30

The Mg acceptor in GaN: synonymity and the classical qubit

K.P. O’Donnell1, A.K. Singh1, P.R. Edwards1, K. Lorenz2, M.J. Kappers3 and M. Boćkowsk4

1SUPA Department of Physics, University of Strathclyde, Glasgow

2IST, Universidade de Lisboa, CTN, Estrada Nacional 102695-066 Bobadela LRS Portugal

3Department of Materials Science and Metallurgy, University of Cambridge

4Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland

 

16.45-17.00

Nanoporous distributed Bragg reflectors for optical microcavities in non-polar GaN

J.C. Jarman1, T. Zhu1, Y. Liu1, T. Ding2, R.V. Kumar1 and R.A. Oliver1

1 Dept. of Materials Science and Metallurgy, University of Cambridge

2 NanoPhotonics Centre, University of Cambridge

  

Friday 6th January

11.00-11.15

Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of III-nitride optoelectronics and the damage threshold

J. T. Griffiths1, S. Zhang1, J. Lhuillier1, D. Zhu1, A. Howkins2, I. Boyd2, D. Stowe3, D. J. Wallis1C. J. Humphreys1 and R. A. Oliver1

1 Dept. of Materials Science and Metallurgy, University of Cambridge

2 Experimental Techniques Centre, Brunel University, Uxbridge

3 Gatan UK, Abingdon, Oxon

 

11.15-11. 30

Thermal Redistribution of Carriers Amongst Localised states in InGaN/GaN Quantum Wells Investigated Using Temperature Dependent Resonant Photoluminescence

S. Hammersley1, D. Tanner2,3, M.J. Kappers4, R.A. Oliver4, C.J. Humphreys4, S. Schulz2 and P. Dawson1

1 School of Physics and Astronomy, Photon Science Institute, University of Manchester

2 Photonics Theory Group, Tyndall National Institute, Cork, Ireland.

3 Dept. of Physics, University of Cork, Cork, Ireland.

4 Dept. of Materials Science and Metallurgy, University of Cambridge

 

11.30-11.45

Spectroscopic studies of defects in zincblende GaN films

S. A. Church1, S. Hammersley1, P. W. Mitchell1, M. J. Kappers2, S. L. Sahonta2, M. Frentrup2, D. Nilsson3P. J. Ward3, L. J. Shaw3, D. J. Wallis2, C. J. Humphreys2, R. A. Oliver2, D. J. Binks1 and P. Dawson1

1 Photon Science Institute & School of Physics and Astronomy, University of Manchester.

2 Dept. of Materials Science & Metallurgy, University of Cambridge.

3 Anvil Semiconductors Ltd, Cambridge.

 

11.45-12.00

Investigations into high energy emission band from InGaN/GaN quantum well structures observed under high excitation power densities

G. M. Christian1, S. Hammersley1, M. J. Kappers2, C. J. Humphreys2, R. A. Oliver2, D. J. Binks1, P. Dawson1

1 School of Physics and Astronomy, Photon Science Institute, University of Manchester,

2 Dept. of Materials Science and Metallurgy, University of Cambridge

  

12.00-12.15

Nanoscopic insights into the effect of silicon on core-shell InGaN/GaN nanorods: luminescence, composition, and structure.

C. X. Ren, F. Tang, R. A. Oliver, T. Zhu

Dept. Materials Science and Metallurgy, University of Cambridge

 

16.15-16.30

Sub-Poissonian electroluminescence emission from highly polarised non-polar InGaN quantum dots

C. Kocher1, T. Puchtler1, J. C. Jarman2, T. Zhu2, R. A. Oliver2, R. A. Taylor1

1 Dept. of Physics, University of Oxford

2 Dept. of Material Science, University of Cambridge

 

16.30-16.45

Non-classical light generation beyond the 200 K thermoelectric barrier with a-plane InGaN quantum dots

T. Wang1, T. J. Puchtler1, T. Zhu2, S. K. Patra3,4, J. C. Jarman2, L. P. Nuttall1, S. Schulz3, R. A. Oliver2 and R. A. Taylor1

1 Dept. of Physics, University of Oxford

2 Dept. of Materials Science and Metallurgy, University of Cambridge

3 Tyndall National Institute, University College Cork, Cork, Ireland

4 Dept. of Electrical Engineering, University College Cork, Ireland

 

16.45-17.00

Ultra-fast, polarized, single-photon emission from m-plane InGaN quantum dots grown on GaN nanowires

T. J. Puchtler1, T. Wang1, C. X. Ren2, R. A. Oliver2, R. A. Taylor1 and T. Zhu2

1 Dept. of Physics, University of Oxford

2 Dept. of Materials Science and Metallurgy, University of Cambridge

 

And Our Posters

An HBr/Ar atomic layer etch process for precision gate recess etching of GaN-based transistors

X. Li1, K. Floros1, S.-J. Cho1, D. Hemakumara1, I. Guiney2, D. Moran1, C. J. Humphreys2 and I. G. Thayne1

1 University of Glasgow

2 Dept. of Materials Science and Metallurgy, University of Cambridge

 

Surface preparation of free standing AlxGa1-xN (0001) layers grown by MBE using a highly efficient RF plasma source

P.-M. Coulon1, S. Novikov2, C. T. Foxon2, A. Bao3, R. A. Oliver3, C. J. Humphreys3, D. Allsopp1 and P. Shields1

1 Dept. Electrical & Electronic Engineering, University of Bath

2 School of Physics and Astronomy, University of Nottingham

3 Dept. of Materials Science and Metallurgy, University of Cambridge

 

Effects of dislocations on the optical properties of blue and green InGaN/GaN Quantum Wells grown at different temperatures

B. Ding, F. C.-P. Massabuau, S.-L. Sahonta, M.J. Kappers, C.J. Humphreys, R. A. Oliver

Dept. of Materials Science and Metallurgy, University of Cambridge

 

Characterization of basal stacking faults of (11-22) GaN using X-ray diffraction

M. Pristovsek, M. Frentrup, T. Zhu, F. Tang, R. A. Oliver and C. J. Humphreys

Dept. of Materials Science and Metallurgy, University of Cambridge

 

Structural analysis of MOVPE-grown zincblende GaN

M. Frentrup, S.-L. Sahonta, M.J. Kappers, C.J. Humphreys and D.J. Wallis

Dept. of Materials Science and Metallurgy,University of Cambridge

 

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June 2017: Structural impact on the nanoscale optical properties of InGaN core-shell nanorods.

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