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Cambridge Centre for Gallium Nitride

 
GaN on Diamond Project launches

The centre has just begun an exciting new £4.3 million EPSRC funded project to develop GaN on diamond microwave devices. The aim is to use diamond layers as a heat spreading layer to allow high power radio and microwave devices for 5G and 6G communication systems. The project is a collaboration with Bristol, Glasgow, Cardiff and Birmingham.

See our project page and the project's press release for more information.

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We conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development.

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