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Cubic GaN growth moves to 6-inch substrates

last modified Jul 18, 2016 01:32 PM

The next stage in our Innovate UK Energy Catalyst project on fabrication of cubic LEDs has arrived, and we plan to grow cubic GaN structures on 6-inch 3C-SiC substrates on (100) silicon, supplied by Anvil. The image shows Anvil's Daniel Nilsson with a standard 4-inch substrate. Menno is holding a new 6-inch large-area wafer.

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