I finished my PhD in late 2009 where I researched gas-phase plasma pre-reactions of CVD at near-atmospheric pressure and how these could affect the growth of thin films. In addition to numerical modelling work focused on breakdown mechanisms in CVD deposited InGaAs photodiodes, I also designed a laser-spectroscopy system to analyse gas phase constituents.
Following my PhD, I took up a project management role in industry which was focused on the growth of GaN, GaAs, InP and GaSb on various substrates by MOCVD. This work took me to various laboratories all over the world, including China, India and the USA. My main areas of device development were in deep UV LEDs on sapphire, GaN on Si and SiC power electronics, InGaAsP-based telecomms modulators and IR-laser diodes.
Since April 2013 I have been leading the power electronics growth activities at Cambridge. My main focus is on large-area GaN on Si growth and characterisation. This is motivated by increased market demands for high-power, cost-effective power and RF electronics, in addition to the improved characterisics of GaN over traditional Si-based techology. I also focus on industry support of improved cost processes for large-scale LED production.
I currently sit on the Semiconductor Group Committee of the Institue of Physics as the treasurer. Aside from funding international conferences and workshops, we like to emphasise the development of students by encouraging interaction within the IoP as early as possible. I would encourage any interested parties to view the IOP Semiconductor Group page.